Photoluminescence of AlxGa1-xAs/AlyGa1-yAs Multiguantum Wells Grown by Pulsed Molecular Beam Epitaxy
Authors:
- Mitsuo KawabeMKMitsuo Kawabe
- Masahumi KondoMKMasahumi Kondo
- Nobuyuki MatsuuraNMNobuyuki Matsuura
- Kenya YamamotoKYKenya Yamamoto
- 1 February 1983
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 22 (2A) , L64
Abstract
Multiquantum wells (MQW) with a structure of Al x Ga1-x As/Al y Ga1-y As were grown by pulsed molecular beam epitaxy in order to raise the emission energy in MQW of the AlGaAs system. Sharp photoluminescence spectra indicate the high quality of MQW structure and the peak emission energy agreed with the calculated value of n=1 electron and hole transition.Keywords
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