Excellent potential of photo-electrochemical etching for fabricating high-aspect-ratio deep trenches in gallium nitride
Open Access
- 10 August 2018
- journal article
- research article
- Published by IOP Publishing in Applied Physics Express
- Vol. 11 (9) , 091001
Abstract
No abstract availableThis publication has 26 references indexed in Scilit:
- Properties of Ge-doped, high-quality bulk GaN crystals fabricated by hydride vapor phase epitaxyJournal of Crystal Growth, 2010
- Electrical and optical properties of thick highly doped p‐type GaN layers grown by HVPEphysica status solidi (c), 2008
- Fabrication of 3-in GaN substrates by hydride vapor phase epitaxy using void-assisted separation methodJournal of Crystal Growth, 2008
- Ultimate Top-down Etching Processes for Future Nanoscale Devices: Advanced Neutral-Beam EtchingJapanese Journal of Applied Physics, 2006
- Electrochemical processes for formation, processing and gate control of III–V semiconductor nanostructuresElectrochimica Acta, 2005
- Theoretical limit estimation of lateral wide band-gap semiconductor power-switching deviceSolid-State Electronics, 2004
- Preparation of Freestanding GaN Wafers by Hydride Vapor Phase Epitaxy with Void-Assisted SeparationJapanese Journal of Applied Physics, 2003
- Etch characteristics of GaN and BN materials in chlorine-based plasmasJournal of Electronic Materials, 2000
- Theory of Semiconductor Superjunction DevicesJapanese Journal of Applied Physics, 1997
- Electrochemical capacitance-voltage profiling of n-type ZnSeJournal of Applied Physics, 1992