The preparation, characterization and application of plasma-enhanced chemically vapour deposited silicon nitride films deposited at low temperatures
Authors:
- Joseph Ya-Min LeeJLJoseph Ya-Min Lee
- K. SooriakumarKSK. Sooriakumar
- Mandar M. DangeMDMandar M. Dange
- 1 August 1991
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 203 (2) , 275-287
Abstract
No abstract availableThis publication has 16 references indexed in Scilit:
- Plasma Deposition and Characterization of Thin Silicon‐Rich Silicon Nitride FilmsJournal of the Electrochemical Society, 1987
- Relation between flow, power, and presence of carrier gas during plasma deposition of thin filmsJournal of Vacuum Science & Technology A, 1986
- Influence of Deposition Temperature, Gas Pressure, Gas Phase Composition, and RF Frequency on Composition and Mechanical Stress of Plasma Silicon Nitride LayersJournal of the Electrochemical Society, 1985
- Preparation and Characterization of Plasma‐Deposited Silicon NitrideJournal of the Electrochemical Society, 1984
- Characterization of Plasma Silicon Nitride LayersJournal of the Electrochemical Society, 1983
- The Correlations Between Physical and Electrical Properties of PECVD SiN with Their Composition RatiosJournal of the Electrochemical Society, 1982
- Mechanisms of Plasma‐Enhanced Silicon Nitride Deposition Using SiH4 / N 2 MixtureJournal of the Electrochemical Society, 1981
- Properties of Plasma‐Deposited Silicon NitrideJournal of the Electrochemical Society, 1979
- Reactive Plasma Deposited Si‐N Films for MOS‐LSI PassivationJournal of the Electrochemical Society, 1978
- Properties of Ammonia-Free Nitrogen-Si[sub 3]N[sub 4] Films Produced at Low TemperaturesJournal of the Electrochemical Society, 1972