Manifestation of excess centers of electron-hole pair generation resulting from field and thermal stresses and their subsequent annihilation in dynamic current-voltage characteristics of Si-MOS structures with ultrathin oxide

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Abstract
Formation of centers of electron-hole pair generation near the silicon-oxide interface under field and thermal effects on Si-MOS structures with ultrathin oxide and poststress annihilation of these structures are studied. Concentrations of generation centers of minority charge carriers (holes) are determined from experimental dynamic current-voltage characteristics of Si-MOS diodes by fixing the accumulation duration of the equilibrium hole density near the surface separating the semiconductor and insulator during the sample transition from a deep depletion state to a pronounced inversion state. It is shown that MOS structures with ultrathin oxide are much more “pliable” to field and thermal stresses in comparison with samples with thick a insulating layer: objects with ultrathin oxide are more easily damaged by external stresses, but more rapidly recover to the initial state at room temperature.

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