High-field conduction in off-stoichiometric SiO2 films

Authors:
Publisher website
Google Scholar
Abstract
The temperature dependence of the high‐field conductivity of SiO2 films with a small atomic excess of Si content is interpreted in terms of a model previously proposed for granular metal films. We have found an excellent quantitative agreement between experimental data and the theory. This agreement clarifies the conduction mechanism in this material and strongly suggests that the Si particles have metallic characteristics. With this interpretation, we are able to determine the volume fraction of the excess Si x, the diameter of the Si grains d, and the interparticle distance s. In the case of samples with an excess of Si atoms of 1% to 3%, we found that x≂0.017, d≂9.5 Å, and s≂20.5 Å.

This publication has 2 references indexed in Scilit: