Halogen and Mercury Lamp Annealing of Arsenic Implanted into Silicon
Authors:
- Katsuhiro YokotaKYKatsuhiro Yokota
- Kenji MutaKMKenji Muta
- Masatoshi KimuraMKMasatoshi Kimura
- Susumu TamuraSTSusumu Tamura
- Shinji IshiharaSIShinji Ishihara
- Itsuro KimuraIKItsuro Kimura
- 1 February 1987
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 26 (2A) , L87-90
Abstract
As implanted Si was annealed using halogen and mercury lamps whose lights primarily have, respectively, infrared and ultraviolet regions. Annealing time necessary for fully electrically activating the implanted As in the mercury lamp annealing was shorter than that in the halogen lamp annealing, when the light emitted from the two lamps was of the same intensity. This was due to the difference in intensity of the light absorbed into the implanted Si between the lamps used at the beginning of annealing.Keywords
This publication has 1 reference indexed in Scilit:
- Effect of Furnace Preanneal and Rapid Thermal Annealing on Arsenic‐Implanted SiliconJournal of the Electrochemical Society, 1985