Hydrogen concentration profiles and chemical bonding in silicon nitride
Authors:
- 1 January 1979
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 8 (1) , 11-24
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- The hydrogen content of plasma-deposited silicon nitrideJournal of Applied Physics, 1978
- The electronic and nuclear stopping of energetic ionsApplied Physics Letters, 1977
- Chemically Bound Hydrogen in CVD Si3 N 4: Dependence on NH 3 / SiH4 Ratio and on AnnealingJournal of the Electrochemical Society, 1977
- Hydrogen content and annealing of memory quality silicon-oxynitride filmsJournal of Electronic Materials, 1976
- Evaluation of Silicon Nitride Layers of Various Composition by Backscattering and Channeling-Effect MeasurementsJournal of Applied Physics, 1971