High-k gate dielectrics with ultra-low leakage current based on praseodymium oxide
Authors:
- H.J. OstenHOH.J. Osten
- J.P. LiuJLJ.P. Liu
- P. GaworzewskiPGP. Gaworzewski
- E. BugielEBE. Bugiel
- P. ZaumseilPZP. Zaumseil
- 11 November 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 653-656
Abstract
No abstract availableThis publication has 2 references indexed in Scilit:
- Praseodymium 3d- and 4d-core photoemission spectra ofPhysical Review B, 1991
- XPES studies of oxides of second- and third-row transition metals including rare earthsJournal of Electron Spectroscopy and Related Phenomena, 1980