Aluminum Nitride Prepared by Nitridation of Aluminum Oxide Precursors
Authors:
- 20 December 2002
- journal article
- Published by Wiley in Journal of the American Ceramic Society
- Vol. 85 (12) , 3117-3119
Abstract
Aluminum nitride (AlN) powders were prepared from the oxide precursors aluminum nitrate, aluminum hydroxide, aluminum 2‐ethyl‐hexanoate, and aluminum isopropoxide (i.e., Al(NO 3 ) 3 , Al(OH) 3 , Al(OH)(O 2 CCH(C 2 H 5 )(C 4 H 9 )) 2 , and Al(OCH(CH 3 ) 2 ) 3 ). Pyrolyses were performed in flowing dry NH 3 and N 2 at 1000°–1500°C. For comparison, the nitride precursors aluminum dimethylamide (Al(N(CH 3 ) 2 ) 3 ) and aluminum trimethylamino alane (AlH 3 ·N(CH 3 ) 3 ) were exposed to the same nitridation conditions. Products were investigated using XRD, TEM, EDX, SEM, and elemental analysis. The results showed that nitridation was primarily controlled by the water:ammonia ratio in the atmosphere. Single‐phase AlN powders were obtained from all oxide precursors. Complete nitridation was not obtained using pure N 2 , even for the non‐oxide precursors.Keywords
This publication has 19 references indexed in Scilit:
- Pyrolysis of Poly(isopropyliminoalane) to Aluminum NitrideJournal of the American Ceramic Society, 2000
- Preparation and properties of TiN and AlN films from alkoxide solution by thermal plasma CVD methodThin Solid Films, 2000
- Polymer Derived Engineering CeramicsAdvanced Engineering Materials, 2000
- Silazane derived ceramics and related materialsMaterials Science and Engineering: R: Reports, 2000
- Preceramic Polymer — Derived Silicon Oxycarbides2000
- Nanocrystalline Aluminum Nitride and Aluminum/Gallium Nitride Nanocomposites via Transamination of [M(NMe2)3]2, M = Al, Al/Ga (1/1)Chemistry of Materials, 1998
- Carbide, Nitride and Boride Materials Synthesis and Processing1997
- Chemical Solution Routes to Single-Crystal Thin FilmsScience, 1996
- Review of the Synthesis Methods for AINMaterials and Manufacturing Processes, 1995
- AlH3(NMe3)2—a useful precursor to AlNAdvanced Materials, 1993