Phosphorus and arsenic penetration studies through HfSixOy and HfSixOyNz films
- 26 August 2002
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 81 (9) , 1609-1611
Abstract
Phosphorus and arsenic penetration studies from P- and As-doped polycrystallinesilicon through HfSi x O y and HfSi x O y N z (18% N) alternate gate dielectric candidates films into Si(100) are presented using a combination of chemical etching and secondary ion mass spectrometry(SIMS). Penetration is observed through HfSi x O y after 1050 and 1000 ° C rapid thermal annealing for As and P, respectively. In contrast, As or P dopant penetration is at the SIMS limit of detection for HfSi x O y N z films. By modeling the P and As depth profiles in the Si substrate, their respective diffusivities in HfSi x O y are higher than the corresponding diffusivities in SiO 2 . The enhanced dopant diffusivity observed in HfSi x O y is proposed to be due to grain boundary formation in the dielectric after crystallization from annealing.Keywords
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