Demonstration of Sub-Millimeter Wave Fundamental Oscillators Using 35-nm InP HEMT Technology
Authors:
- V. RadisicVRV. Radisic
- X. B. MeiXMX. B. Mei
- W. R. DealWDW. R. Deal
- W. YoshidaWYW. Yoshida
- P. H. LiuPLP. H. Liu
- J. UyedaJUJ. Uyeda
- M. BarskyMBM. Barsky
- L. SamoskaLSL. Samoska
- A. FungAFA. Fung
- T. GaierTGT. Gaier
- R. LaiRLR. Lai
- 5 March 2007
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Microwave and Wireless Components Letters
- Vol. 17 (3) , 223-225
Abstract
In this letter, 254-, 314-, and 346-GHz fundamental oscillators are demonstrated. These are the highest frequency oscillators using three-terminal devices reported to date. The performance is enabled through a 35-nm InP HEMT process with maximum frequency of oscillation (fmax) of 600GHz. These first-pass designs use coplanar waveguide (CPW) technology and include on-chip resonator and output matching. The maximum available gain (MAG) of these devices has been measured to be ~9.6dB at 200GHzKeywords
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