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Regrowth of GaAs quantum wells on GaAs liftoff films ‘van der Waals bonded’ to silicon substrates
Home
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Regrowth of GaAs quantum wells on GaAs liftoff films ‘van der Waals bonded’ to silicon substrates
Regrowth of GaAs quantum wells on GaAs liftoff films ‘van der Waals bonded’ to silicon substrates
Authors:
EY
E. Yablonovitch
E. Yablonovitch
KK
K. Kash
K. Kash
TG
T.J. Gmitter
T.J. Gmitter
LF
L.T. Florez
L.T. Florez
JH
J.P. Harbison
J.P. Harbison
EC
E. Colas
E. Colas
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19 January 1989
journal article
Published by
Institution of Engineering and Technology (IET)
in
Electronics Letters
Vol. 25
(2)
,
171
DOI:
10.1049/el:19890123
Abstract
No abstract available
Keywords
VAN DER WAALS BONDED
MOCVD
SEMICONDUCTOR EPITAXIAL FILMS
EPITAXIAL REGROWTH
MOVPE
GAAS ON SI
SEMICONDUCTORS
SI SUBSTRATE
GAAS LIFTOFF FILMS
GAAS-GAAS EPITAXY
GAAS QUANTUM WELLS
1 MICRON
LINEWIDTHS
LUMINESCENCE EFFICIENCIES
GAAS-SI BONDING
SINGLE-CRYSTAL GAAS FILMS BONDED
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