Formation andin situdynamics of metallic nanoblisters in Ga+implanted GaN nanowires
Authors:
- A DattaADA Datta
- S MutoSMS Muto
- C W HsuCHC W Hsu
- T MaruyamaTMT Maruyama
- K H ChenK H Chen
- L C ChenL C Chen
- Y L WangYWY L Wang
- 11 October 2005
- journal article
- Published by IOP Publishing in Nanotechnology
- Vol. 16 (12) , 2764-2769
Abstract
No abstract availableKeywords
This publication has 20 references indexed in Scilit:
- Mechanism of nanoblister formation in Ga+ self-ion implanted GaN nanowiresApplied Physics Letters, 2005
- Frontiers of silicon-on-insulatorJournal of Applied Physics, 2003
- Mechanism of swelling in low-energy ion-irradiated siliconPhysical Review B, 2001
- Ion-beam-induced dissociation and bubble formation in GaNApplied Physics Letters, 2000
- Ion-beam-induced porosity of GaNApplied Physics Letters, 2000
- TEM and SEM studies of radiation blistering in helium-implanted copperJournal of Nuclear Materials, 1999
- TEM and IBA study of the thermal oxidation of V following high dose He implantationJournal of Nuclear Materials, 1997
- Gas Bubble Lattices in Metals1991
- Proximity gettering with mega-electron-volt carbon and oxygen implantationsApplied Physics Letters, 1988
- Kinetics of void-lattice formation in metalsNature, 1980