Role of hydrogen in the formation of metastable defects in hydrogenated amorphous silicon
Authors:
- 15 January 1989
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 39 (2) , 1164-1179
Abstract
This paper presents results of studies on carrier-induced metastable defect creation in hydrogenated amorphous silicon. The metastable defects were studied by measuring the threshold voltage shifts on thin-film amorphous silicon transistors and capacitors as a function of time, temperature, and bias. The kinetics (time, temperature, bias, and doping dependence) of these defects as well as most other metastable-defect processes are quantitatively explained by hydrogen diffusion and the creation of defects due to the presence of excess band-tail carriers.Keywords
This publication has 48 references indexed in Scilit:
- Detailed investigation of doping in hydrogenated amorphous silicon and germaniumPhysical Review B, 1987
- Thermal-equilibrium processes in amorphous siliconPhysical Review B, 1987
- Hydrogenated microvoids and light-induced degradation of amorphous-silicon solar cellsApplied Physics A, 1986
- Photo-induced degradation of a-Si: H diodes with an nin structureSolid State Communications, 1984
- Observation of a Reversible Field-Induced Doping Effect in Hydrogenated Amorphous SiliconPhysical Review Letters, 1982
- Light-induced dangling bonds in hydrogenated amorphous siliconApplied Physics Letters, 1981
- Light-induced radiative recombination centers in hydrogenated amorphous siliconApplied Physics Letters, 1980
- Optically induced conductivity changes in discharge-produced hydrogenated amorphous siliconJournal of Applied Physics, 1980
- Fatigue effect in luminescence of glow discharge amorphous silicon at low temperaturesSolid State Communications, 1980
- Reversible conductivity changes in discharge-produced amorphous SiApplied Physics Letters, 1977