Heterostructures of GaN with SiC and ZnO enhance carrier stability and separation in framework semiconductors
- 9 March 2017
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 214 (4)
Abstract
No abstract availableKeywords
Funding Information
- Engineering and Physical Sciences Research Council (EP/K038419, EP/I03014X, EP/K016288)
- Materials Chemistry Consortium (EP/L000202)
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