Relation between oxide thickness and the breakdown voltage of a planar junction with field relief electrode

Authors:
  • PAP.G. Alonas
    P.G. Alonas
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Abstract
A semitheoretical relationship has been developed between the surface breakdown of a planar junction protected by an overlaying field plate and its description in terms of resistivity and oxide thickness. This has been confirmed experimentally on p+-n diodes in 45-Ω . cm material for a wide range of oxide thicknesses.