A deep ultraviolet photodetector based on n-ε-Ga2O3/p-diamond heterojunction

Authors:
  • MJMingxin Jiang
    Mingxin Jiang
  • MZMengwei Zhong
    Mengwei Zhong
  • PXPumin Xu
    Pumin Xu
  • JCJiayi Cai
    Jiayi Cai
  • ZJZhenglin Jia
    Zhenglin Jia
  • NJNan Jiang
    Nan Jiang
  • KNKazuhito Nishimura
    Kazuhito Nishimura
  • ZWZhiyun Wu
    Zhiyun Wu
  • BZBingxue Zhang
    Bingxue Zhang
  • KCKuan W.A. Chee
    Kuan W.A. Chee
  • XLXin Li
    Xin Li
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Abstract
Diamond based deep-ultraviolet photodetectors exhibit significant potential applications in communications, sensing and imaging. However, the challenge of n-type doping restricts the fabrication of diamond pn structural photodetectors. In this work, a photodetector based on n-ɛ-Ga2O3/p-diamond heterojunction was fabricated by depositing n-type ɛ-Ga2O3 on p-type diamond substrate via pulsed laser deposition (PLD). X-ray photoelectron spectroscopy (XPS) analysis indicated the ɛ-Ga2O3/diamond heterojunction possesses a Type II band structure, with valence and conduction band offsets of approximately 2.23 eV and 3.10 eV, respectively. The fabricated detector exhibits an ultra-low dark current of 1.47×10-12 A and a high photo-to-dark current ratio (PDCR) of 106. The detector also demonstrated excellent spectral selectivity in the deep-ultraviolet wavelength region. Moreover, the detector exhibits the self-power ability when illuminated by DUV light due to the formation of the hetero p-n junction. This study demonstrates the feasibility of integrating Ga2O3 with diamond and paves the way for the design and analyses of future deep-ultraviolet photodetectors based on Ga2O3/diamond heterojunction.

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