The application of atomic layer deposition for metallization of 65 nm and beyond
Author:
- H. KimHKH. Kim
- 1 February 2006
- journal article
- Published by Elsevier in Surface and Coatings Technology
- Vol. 200 (10) , 3104-3111
Abstract
No abstract availableKeywords
This publication has 26 references indexed in Scilit:
- Ruthenium Oxide Nanotube Arrays Fabricated by Atomic Layer Deposition Using a Carbon Nanotube TemplateAdvanced Materials, 2003
- Ruthenium Thin Films Grown by Atomic Layer DepositionChemical Vapor Deposition, 2003
- Electrodeposition of Copper Thin Film on RutheniumJournal of the Electrochemical Society, 2003
- Technology and reliability constrained future copper interconnects. I. Resistance modelingIEEE Transactions on Electron Devices, 2002
- Plasma-Enhanced Atomic Layer Deposition of Ta-N Thin FilmsJournal of the Electrochemical Society, 2002
- The use of in situ X-ray diffraction, optical scattering and resistance analysis techniques for evaluation of copper diffusion barriers in blanket films and damascene structuresThin Solid Films, 2001
- Thermodynamic Calculations and Metallorganic Chemical Vapor Deposition of Ruthenium Thin Films Using Bis(ethyl-π-cyclopentadienyl)Ru for Memory ApplicationsJournal of the Electrochemical Society, 2000
- Diffusion Barrier Properties of Metallorganic Chemical Vapor Deposited Tantalum Nitride Films Against Cu MetallizationJournal of the Electrochemical Society, 1999
- Controlled Growth of TaN, Ta3N5, and TaOxNy Thin Films by Atomic Layer DepositionChemistry of Materials, 1999
- Fine-line interactions in Al/Hf/Al thin filmsPhysical Review B, 1991