Electrical and optical properties of Bi2Ti2O7 thin films prepared by metalorganic decomposition method
Authors:
- 16 August 2004
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 85 (7) , 1214-1216
Abstract
Highly (111) oriented Bi2Ti2O7 thin films have been grown on Pt∕Ti∕SiO2∕Si and Al2O3 substrates by metalorganic decomposition method at 550°C. The structural properties of the films were examined by x-ray diffraction. The Bi2Ti2O7 films exhibit good insulating property and the leakage current density of the film on Pt∕Ti∕SiO2∕Si is only about 1.56×10−8A∕cm2 at 200kV∕cm. The refractive index and extinction coefficient of Bi2Ti2O7 thin films were determined by fitting the infrared spectroscopic ellipsometric data using a classical dielectric function formula. As the wavelength increases, the refractive index decreases, while the extinction coefficient increases. And the band-gap energy Eg was obtained from the optical transmission spectra of Bi2Ti2O7 thin films.Keywords
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