Device Options and Design Considerations for High-Voltage (10-20 kV) SiC Power Switching Devices
Authors:
- 15 October 2006
- journal article
- Published by Trans Tech Publications, Ltd. in Materials Science Forum
- Vol. 527-529, 1449-1452
Abstract
We compare the on-state characteristics of five 4H-SiC power devices designed to block 20 kV. At such a high blocking voltage, the on-state current density depends heavily on the degree of conductivity modulation in the drift region, making the IGBT and thyristor attractive devices for high blocking voltages.Keywords
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