GaN MIS-HEMTs With Nitrogen Passivation for Power Device Applications
Authors:
- 27 August 2014
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 35 (10) , 1001-1003
Abstract
A GaN MIS-HEMT with nitrogen (N)-passivation for power device applications is demonstrated. In this letter, nitrogen radicals were adopted to recover nitrogen-vacancy-related defects which were formed due to the thermal decomposition and evaporation of nitrogen atoms from GaN surface during high-temperature process. Besides, nitrogen radicals can also remove impurities and reduce surface dangling bonds by forming Ga-N bonds on the SiN/GaN interface. With N-passivation, the device shows high ON/OFF current ratio, steep subthreshold slope, low OFF-state leakage current, high breakdown voltage, and improved dynamic ON-resistance. The device reliability under high-electric field stress was also improved as a result.Keywords
Funding Information
- I-Rice Program through the National Chiao Tung University, Hsinchu, Taiwan and University of California at Berkeley, Berkeley, CA, USA
- Ministry of Science and Technology, Taiwan
- Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (NSC-103-2911-I-009-302)
This publication has 11 references indexed in Scilit:
- Impact of Water-Assisted Electrochemical Reactions on the OFF-State Degradation of AlGaN/GaN HEMTsIEEE Transactions on Electron Devices, 2013
- Methodology for the Study of Dynamic ON-Resistance in High-Voltage GaN Field-Effect TransistorsIEEE Transactions on Electron Devices, 2013
- Dehydrogenation of defects and hot-electron degradation in GaN high-electron-mobility transistorsJournal of Applied Physics, 2011
- Reliability of GaN High-Electron-Mobility Transistors: State of the Art and PerspectivesIEEE Transactions on Device and Materials Reliability, 2008
- Surface leakage currents in SiN/sub x/ passivated AlGaN/GaN HFETsIEEE Electron Device Letters, 2005
- Improved reliability of AlGaN-GaN HEMTs using an NH/sub 3/ plasma treatment prior to SiN passivationIEEE Electron Device Letters, 2005
- Influence of Surface Defect Charge at AlGaN–GaN-HEMT Upon Schottky Gate Leakage Current and Breakdown VoltageIEEE Transactions on Electron Devices, 2005
- Effects of SiN passivation and high-electric field on AlGaN-GaN HFET degradationIEEE Electron Device Letters, 2003
- Slow transients observed in AlGaN HFETs: Effects of SiN/sub x/ passivation and UV illuminationIEEE Transactions on Electron Devices, 2003
- Discrete surface state related to nitrogen-vacancy defect on plasma-treated GaN surfacesApplied Physics Letters, 2002