Fatigue study of metalorganic-decomposition-derived SrBi2Ta2O9 thin films: The effect of partial switching
Authors:
- 17 April 2000
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 76 (16) , 2208-2210
Abstract
Fatigue characteristics of metalorganic-decomposition derived SrBi2Ta2O9 (SBT) ferroelectric thin films were investigated with varying film thickness, capacitor size, switching pulse amplitude, and pulse width. The effect of partial switching on fatigue was studied. An increase of nonvolatile polarization (Pnv) was observed over the initial period of fatigue when the capacitor was fully switched by the applied bipolar cycles. Fatigue increases with decreasing applied field and pulse width. These support the idea that fatigue in SBT may be viewed as a competition between domain-wall pinning and field-assisted unpinning. Partial switching caused by small field and short pulse width enhances charge trapping at domain walls, thus increasing fatigue.Keywords
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