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Publications
A Planarization Model in Chemical Mechanical Polishing of Silicon Oxide using High Selective CeO
2
Slurry
Home
Publications
A Planarization Model in Chemical Mechanical Polishing of Silicon Oxide using High Selective CeO
2
Slurry
A Planarization Model in Chemical Mechanical Polishing of Silicon Oxide using High Selective CeO
2
Slurry
Authors:
JL
Jong Won Lee
Jong Won Lee
BY
Bo Un Yoon
Bo Un Yoon
SH
Sangrok Hah
Sangrok Hah
JM
Joo Tae Moon
Joo Tae Moon
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1 January 2001
journal article
Published by
Springer Nature
in
MRS Proceedings
Vol. 671
DOI:
10.1557/proc-671-m5.3
Abstract
No abstract available
Keywords
POLISHING
MODEL
HIGH SELECTIVE
SLURRY
PLANARIZATION
REMOVAL
SILICON
CERIA
CMP
PAD
Cited
Cited by 8 articles
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