600-V / 2-A Symmetrical Bi-Directional Power Flow Using Vertical-Channel JFETs Connected in Common Source Configuration
Authors:
- 29 April 2010
- journal article
- Published by Trans Tech Publications, Ltd. in Materials Science Forum
- Vol. 645-648, 1147-1150
Abstract
Bi-directional solid-state-circuit-breakers (SSCBs) are highly desirable in power-electronic fault-protection applications due to their high actuation speed and repeated fault isolation capability. Normally-on SiC vertical-channel JFETs (VJFETs) are excellent candidates for high power/temperature scalable SSCB applications as majority carrier devices with low conduction losses and stable +300°C thermal characteristics. 600-V / 2-A bi-directional power flow was demonstrated using two VJFETs connected back-to-back with their sources in common. The low VJFET pre-breakdown leakage currents and sharp onset of breakdown are critical in enabling bi-directional power flow. 0.1-cm2 low conduction-loss VJFETs were designed for efficient and reliable SSCB applications.Keywords
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