An electrochemical P-N junction etch-stop for the formation of silicon microstructures
Authors:
- M.A. TischlerMTM.A. Tischler
- K.D. WiseKWK.D. Wise
- 1 February 1981
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 2 (2) , 44-45
Abstract
An electrochemical technique allowing the protection of selected areas of silicon in ethylene diamine-based etchants is reported, and its application to the formation of silicon microstructures is described. Dissolution rates for passivated samples are less than 5 Å/minute, a factor of over 3000 times less than for unpassivated silicon.Keywords
This publication has 7 references indexed in Scilit:
- Fabrication of hemispherical structures using semiconductor technology for use in thermonuclear fusion researchJournal of Vacuum Science and Technology, 1979
- Special issue on three-dimensional semiconductor device structuresIEEE Transactions on Electron Devices, 1978
- Diaphragm formation and pressure sensitivity in batch-fabricated silicon pressure sensors1978
- Ethylene Diamine-Pyrocatechol-Water Mixture Shows Etching Anomaly in Boron-Doped SiliconJournal of the Electrochemical Society, 1971
- Electrochemically Controlled Thinning of SiliconBell System Technical Journal, 1970
- A Water-Amine-Complexing Agent System for Etching SiliconJournal of the Electrochemical Society, 1967
- Beam-Lead TechnologyBell System Technical Journal, 1966