Two-Terminal Nonvolatile Memories Based on Single-Walled Carbon Nanotubes
- 11 November 2009
- journal article
- research article
- Published by American Chemical Society (ACS) in ACS Nano
- Vol. 3 (12) , 4122-4126
Abstract
Reproducible current hysteresis is observed in semiconducting single-walled carbon nanotubes (SWCNTs) measured in a two-terminal configuration without a gate electrode. On the basis of this hysteresis, a two-terminal nonvolatile memory is realized by applying voltage pulses of opposite polarities across the SWCNT. Charge trapping at the SWCNT/SiO2 interface is proposed to account for the observed phenomena; this explanation is supported by the direct correlation between the switching behaviors and SWCNT carrier types. In particular, a change in dominant carrier type induced by adsorbates in air leads to the direct transition of hysteresis evolution in the same device, providing further evidence for the proposed mechanism.Keywords
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