Optical properties of thick-film GaN grown by hydride vapor phase epitaxy on MgAl2O4 substrate
Authors:
- 1 October 1998
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 27 (10) , 1112-1116
Abstract
No abstract availableKeywords
This publication has 22 references indexed in Scilit:
- Growth and properties of single crystalline GaN substrates and homoepitaxial layersMaterials Science and Engineering: B, 1997
- InGaN-GaN based light-emitting diodes over (111) spinel substratesApplied Physics Letters, 1996
- Characteristics of InGaN multi-quantum-well-structure laser diodesApplied Physics Letters, 1996
- Novel symmetry in the growth of gallium nitride on magnesium aluminate substratesApplied Physics Letters, 1996
- Dynamics of bound-exciton luminescences from epitaxial GaNApplied Physics Letters, 1996
- High-quality GaN epitaxial layer grown by metalorganic vapor phase epitaxy on (111) MgAl2O4 substrateApplied Physics Letters, 1995
- GaN, AlN, and InN: A reviewJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 1992
- Photoluminescent determination of Mn concentration and its diffusion in semi-insulating GaAsJournal of Applied Physics, 1985
- The Etch Rate and Deterioration of Magnesium Aluminum Spinel in HydrogenJournal of the Electrochemical Society, 1972
- Donor-acceptor pair recombination in GaNSolid State Communications, 1971