Chirality-Dependent Electrical Characteristics of MoS2 Nanoscroll Transistors

Authors:
Publisher website
Google Scholar
Abstract
MoS2 nanoscrolls can be intrinsically chiral quasi-1D materials, yet the influence of chirality on their electrical characteristics remains unresolved, since chirality metrology and device measurement have rarely been achieved on the same individual scrolls. In this work, we integrate polarization-resolved second-harmonic generation (SHG) with transistor characterization on MoS2 nanoscroll devices to address this long-standing question. We develop a unified SHG fitting model to extract an effective chiral angle (φ) for each scroll and establish a systematic correlation between transfer characteristics and structural parameters. The on-state current decreases with increasing |φ| and is further influenced by a strain-related parameter, whereas the off-state current correlates more closely with an SHG-derived winding/thickness indicator, consistent with electrostatic screening in multi-turn channels. These findings clarify the role of chirality and related geometric parameters in defining the transport properties of low-dimensional systems and provide useful insights for chirality-based nanoelectronics.
Funding Information
  • National Key Research and Development Program of China (2024YFA1410500)
  • Science and Technology Commission of Shanghai Municipality (25JC3200500)
  • ShanghaiTech University
  • National Natural Science Foundation of China (92477204)

This publication has 36 references indexed in Scilit: