Single-shot all-optical magnetization switching in in-plane magnetized magnetic tunnel junction

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Abstract
Single pulse All Optical Helicity-Independent Switching is demonstrated in an in-plane magnetized magnetic tunnel junction. A toggle switching of the 2 nm thick Co40Fe40B20 soft layer could be achieved by exchange coupling the Co40Fe40B20 with a 10 nm thick Co85Gd15 layer monitored by measuring the Tunnel magneto resistance of the device. The use of in plane magnetized electrodes relaxes the constrains linked to perpendicular magnetic anisotropy systems while achieving a tunneling magnetoresistance ratio exceeding 100%. The influence of the upper electrical electrode, which is opaque to the laser beam in this study, is also discussed.
Funding Information
  • Agence Nationale de la Recherche (ANR-17-CE24-0007 UFO)
  • Agence Nationale de la Recherche (ANR-23-CE30-0047 Slam)
  • Agence Nationale de la Recherche (ANR-22- PEEL-0009)
  • Agence Nationale de la Recherche (ANR-22-EXSP 0007)
  • Japan Society for the Promotion of Science London (KAKENHI JP24K22964)
  • MAT-PULSE-Lorraine Université d'Excellence project (ANR-15-IDEX-04-LUE)
  • European Cooperation in Science and Technology (CA23136 CHIROMAG)
  • Metropole Grand Nancy (Optimag)

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