Microstructure and morphology of some epitaxial ReSi2 films on (001) silicon
Authors:
- John E. MahanJMJohn E. Mahan
- G. BaiGBG. Bai
- M-A. NicoletMNM-A. Nicolet
- Robert G. LongRLRobert G. Long
- Kent M. GeibKGKent M. Geib
- 1 January 1992
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 207 (1-2) , 223-230
Abstract
No abstract availableThis publication has 12 references indexed in Scilit:
- Radiation damage in ReSi2 by a MeV 4He beamApplied Physics Letters, 1990
- Epitaxial tendencies of ReSi2 on (001) siliconApplied Physics Letters, 1990
- Channeling of MeV ions in polyatomic epitaxial films:on Si(100)Physical Review B, 1990
- Two pseudobinary semiconducting silicides: RexMo1−xSi2and CrxV1−xSi2Applied Physics Letters, 1990
- Optical and electrical properties of semiconducting rhenium disilicide thin filmsThin Solid Films, 1988
- Some properties of ReSi2Thin Solid Films, 1988
- Localized epitaxial growth of ReSi2 on (111) and (001) siliconJournal of Applied Physics, 1987
- Thermal evolution of molybdenum disilicide grown on (100) silicon under ultrahigh vacuum conditionsJournal of Applied Physics, 1986
- Si-Beam Radiation Cleaning in Molecular-Beam EpitaxyJapanese Journal of Applied Physics, 1985
- The crystal structure and some properties of ReSi2Journal of the Less Common Metals, 1983