NVM based on FinFET device structures
Authors:
- 30 November 2005
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 49 (11) , 1799-1804
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- 20 nm tri-gate SONOS memory cells with multi-level operation2005
- Novel Dual Bit Tri-Gate Charge Trapping Memory DevicesIEEE Electron Device Letters, 2004
- FinFET-a self-aligned double-gate MOSFET scalable to 20 nmIEEE Transactions on Electron Devices, 2000