Effects of oxygen partial pressure on lead content of PLZT thin films produced by excimer laser deposition
Authors:
- 1 November 1992
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 220 (1-2) , 87-91
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- LASER PROCESSING OF HIGH TEMPERATURE SUPERCONDUCTING THIN FILMSMaterials and Manufacturing Processes, 1990
- Properties of ion beam deposited Pb1−xLax(ZryTiz)1−x/4O3Journal of Vacuum Science & Technology A, 1989
- Laser plasma source of amorphic diamondApplied Physics Letters, 1989
- Formation of dielectric and semiconductor thin films by laser-assisted evaporationApplied Physics A, 1988
- Laser evaporation deposition of superconducting and dielectric thin filmsApplied Physics Letters, 1988
- Growth of thin films by laser-induced evaporationCritical Reviews in Solid State and Materials Sciences, 1988
- Epitaxial ordering of oxide superconductor thin films on (100) SrTiO3 prepared by pulsed laser evaporationApplied Physics Letters, 1987
- Preparation of Y-Ba-Cu oxide superconductor thin films using pulsed laser evaporation from high T c bulk materialApplied Physics Letters, 1987
- Pulsed laser desorption for resonance ionization mass spectrometryAnalytical Chemistry, 1985
- Vacuum Deposited Thin Films Using a Ruby LaserApplied Optics, 1965