Effect of incomplete ionization for the description of highly aluminum-doped silicon
Authors:
- 15 July 2011
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 110 (2) , 024508
Abstract
In this study we present an advanced method for precise modeling of highly aluminum-doped p+ silicon, leading to excellent agreement of numerical and experimental data within a broad range. We analyze the influence of different recombination mechanisms on the saturation current densities of Al-doped Si surfaces for different Al profiles. Lateral doping inhomogeneities and the effect of incomplete ionization have been examined in detail. We demonstrate that incomplete ionization affects the profile characteristics significantly and, therefore, has to be accounted for in accurate modeling of highly Al-doped silicon.Keywords
This publication has 19 references indexed in Scilit:
- Formation of aluminum–oxygen complexes in highly aluminum-doped siliconSemiconductor Science and Technology, 2010
- Effectively surface‐passivated aluminium‐doped p+ emitters for n‐type silicon solar cellsPhysica Status Solidi (a), 2010
- A simulation model for the density of states and for incomplete ionization in crystalline silicon. II. Investigation of Si:As and Si:B and usage in device simulationJournal of Applied Physics, 2006
- A simulation model for the density of states and for incomplete ionization in crystalline silicon. I. Establishing the model in Si:PJournal of Applied Physics, 2006
- Temperature- and injection-dependent lifetime spectroscopy for the characterization of defect centers in semiconductorsApplied Physics Letters, 2003
- Additional structure in infrared excitation spectra of group-III acceptors in siliconPhysical Review B, 1983
- Phonon-assisted Auger recombination in Si with direct calculation of the overlap integralsSolid State Communications, 1980
- The temperature dependence of band-to-band Auger recombination in siliconApplied Physics Letters, 1979
- Statistics of the Recombinations of Holes and ElectronsPhysical Review B, 1952
- Electron-Hole Recombination in GermaniumPhysical Review B, 1952