Improved film growth and flatband voltage control of ALD HfO/sub 2/ and Hf-Al-O with n/sup +/ poly-Si gates using chemical oxides and optimized post-annealing
Authors:
- B. BrijsBBB. Brijs
- R.B. van DoverRDR.B. van Dover
- A. KornblitAKA. Kornblit
- T. GustafssonTGT. Gustafsson
- E. GarfunkelEGE. Garfunkel
- S. HilleniusSHS. Hillenius
- 25 June 2003
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 88-89
Abstract
We demonstrate for the first time that chemical oxide underlayers /spl sim/5 /spl Aring/ thick provide improved growth and flatband voltage control of ALD HfO/sub 2/ films compared to thermal oxides. Optimized annealing conditions are shown to greatly reduce both fixed charge and interfacial oxide growth in the high-/spl kappa/ stacks. Extremely small flatband voltage shifts of <30 mV are achieved, corresponding to a very low fixed charge of Q/sub f//spl sim/2E11/cm/sup 2/.Keywords
This publication has 1 reference indexed in Scilit:
- High-κ gate dielectrics: Current status and materials properties considerationsJournal of Applied Physics, 2001