Ab Initio Insights into the Reactivity of Precursors in Atomic Layer Deposition: A Case Study of GeAsSe
- 17 October 2025
- journal article
- Published by American Chemical Society (ACS) in The Journal of Physical Chemistry C
- Vol. 129 (43) , 19573-19585
Abstract
No abstract availableFunding Information
- Fonds Wetenschappelijk Onderzoek (1SH9E24N)
This publication has 39 references indexed in Scilit:
- Spontaneous Reactions by Atomic Hydrogen – An Extraordinary Reactant for Atomic Layer Deposition of PlatinumChemistry of Materials, 2025
- Dimerization equilibrium of group 13 precursors for vapor deposition of thin filmsComputational and Theoretical Chemistry, 2024
- Thermal atomic layer deposition of ternary Ge-S-Se alloy for advanced ovonic threshold switch selectors in three-dimensional cross-point memory arrayJournal of Alloys and Compounds, 2023
- How arsenic makes amorphous GeSe a robust chalcogenide glass for advanced memory integrationScripta Materialia, 2022
- Usage impact on data center electricity needs: A system dynamic forecasting modelApplied Energy, 2021
- Surface reaction of silicon chlorides during atomic layer deposition of silicon nitrideApplied Surface Science, 2018
- A brief review of atomic layer deposition: from fundamentals to applicationsMaterials Today, 2014
- Precursors as enablers of ALD technology: Contributions from University of HelsinkiCoordination Chemistry Reviews, 2013
- Incorporation of indium and gallium in atomic layer epitaxy of InGaAs on InP substratesJournal of Crystal Growth, 2011
- High density 3D memory architecture based on the resistive switching effectSolid-State Electronics, 2009