The enhanced photo absorption and carrier transportation of InGaN/GaN Quantum Wells for photodiode detector applications
Authors:
Open Access
- 27 February 2017
- journal article
- research article
- Published by Springer Nature in Scientific Reports
- Vol. 7 (1) , 43357
Abstract
We have conducted a series of measurements of resonantly excited photoluminescence, photocurrent and photovoltage on InGaN/GaN quantum wells with and without a p-n junction under reverse bias condition. The results indicate that most of the resonantly excited photo-generated carriers are extracted from the quantum wells when a p-n junction exists, and the photon absorption of quantum wells is enhanced by the p-n junction. Additionally, the carrier extraction becomes more distinct under a reverse bias. Our finding brings better understanding of the physical characteristics of quantum wells with p-n junction, which also suggests that the quantum well is suitable for photodiode detectors applications when a p-n junction is used.Keywords
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