Photostability of pulsed laser deposited amorphous thin films from Ge-As-Te system
Authors:
Open Access
- 23 March 2015
- journal article
- research article
- Published by Springer Nature in Scientific Reports
- Vol. 5 (1) , srep09310
Abstract
Amorphous thin films from Ge-As-Te system were prepared by pulsed laser deposition to study their intrinsic photostability, morphology, chemical composition, structure and optical properties. Photostability of fabricated layers was studied by spectroscopic ellipsometry within as-deposited as well as relaxed (annealed) layers. For irradiation, laser sources operating at three wavelengths in band gap region of the studied materials were employed. The results show that lowest values of photorefraction accompanied with lowest changes of band gap values were exhibited by Ge20As20Te60 thin films, which are therefore considered as the layers with highest photostability in relaxed state. The structure of the films is discussed based on Raman scattering spectroscopy data.Keywords
This publication has 35 references indexed in Scilit:
- Pulsed laser deposited amorphous chalcogenide and alumino-silicate thin films and their multilayered structures for photonic applicationsThin Solid Films, 2013
- Tellurium‐Based Far‐Infrared Transmitting GlassesJournal of the American Ceramic Society, 2009
- Kerr spatial solitons in chalcogenide waveguidesOptics Letters, 2009
- Light-Induced Matrix Softening of Ge-As-Se Network GlassesPhysical Review Letters, 2008
- Photoinduced volume change in arsenic chalcogenides by band-gap lightPhysical Review B, 2006
- Structural and optical properties of Ge-As-Te thin filmsThe European Physical Journal Applied Physics, 2006
- A model for the photostructural changes in amorphous chalcogenidesPhilosophical Magazine Letters, 1998
- Measurement of local structural configurations associated with reversible photostructural changes in arsenic trisulfide filmsPhysical Review B, 1987
- The Raman Spectrum of Amorphous TelluriumPhysica Status Solidi (b), 1972
- Electrical conductivity of melts and their ability to form glasses in the system Ge + As + TeDiscussions of the Faraday Society, 1970