Temperature dependence of the spin Hall angle and switching current in the nc-W(O)/CoFeB/MgO system with perpendicular magnetic anisotropy

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Abstract
We investigated the temperature dependence of the switching current for a perpendicularly magnetized CoFeB film deposited on a nanocrystalline tungsten film with large oxygen content: nc-W(O). The effective spin Hall angle |ΘSHeff|≈0.22 is independent of temperature, whereas the switching current increases strongly at low temperature. The increase indicates that the current induced switching itself is thermally activated, in agreement with a recent theoretical prediction. The dependence of the switching current on the in-plane assist field suggests the presence of an interfacial Dzyaloshinskii–Moriya interaction with D ≈ 0.23 mJ/m2, intermediate between the Pt/CoFe and Ta/CoFe systems. We show that the nc-W(O) is insensitive to annealing, which makes this system a good choice for the integration into magnetic memory or logic devices that require a high-temperature annealing process during fabrication.
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