A high-density MIM capacitor (13 fF/μm/sup 2/) using ALD HfO2 dielectrics
Authors:
- A. ChinACA. Chin
- M.F. LiMLM.F. Li
- Byung Jin ChoBCByung Jin Cho
- Dim-Lee KwongDKDim-Lee Kwong
- P.D. FooPFP.D. Foo
- Ming Bin YuMYMing Bin Yu
- 29 April 2003
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 24 (2) , 63-65
Abstract
Metal-insulator-metal (MIM) capacitors with different HfO/sub 2/ thickness have been investigated. The results show that both the capacitance density and voltage coefficients of capacitance (VCCs) increase with decreasing HfO/sub 2/ thickness. In addition, it is found that the VCCs decrease logarithmically with increasing thickness. Furthermore, the MIM capacitor with 10-nm HfO/sub 2/ shows a record high capacitance density of 13 fF//spl mu/m/sup 2/ and a VCC of 607 ppm/V, which can meet the requirement of the International Technology Roadmap for Semiconductors. It can also provide a low leakage current of 5.95 /spl times/ 10/sup -8/A/cm/sup 2/ at room temperature at 1 V, low tangent values below 0.05, and a small frequency dependence. These results indicate that the devices are suitable for use in silicon integrated circuit applications.Keywords
This publication has 8 references indexed in Scilit:
- High density metal insulator metal capacitors using PECVD nitride for mixed signal and RF circuits2003
- Performance and reliability of ultra thin CVD HfO/sub 2/ gate dielectrics with dual poly-Si gate electrodes2002
- Integration of thin film MIM capacitors and resistors into copper metallization based RF-CMOS and Bi-CMOS technologies2002
- A high reliability metal insulator metal capacitor for 0.18 μm copper technology2002
- A high performance MIM capacitor using HfO2 dielectricsIEEE Electron Device Letters, 2002
- High-density MIM capacitors using Al2O3 and AlTiOx dielectricsIEEE Electron Device Letters, 2002
- High-κ gate dielectrics: Current status and materials properties considerationsJournal of Applied Physics, 2001
- Analog characteristics of metal-insulator-metal capacitors using PECVD nitride dielectricsIEEE Electron Device Letters, 2001