Reduction of the thermopower in semiconducting point contacts

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Abstract
We investigate the thermopower of silicon point contacts as a function of contact size, temperature, and doping concentration. Reduction of the contact size causes a decrease of the thermopower, which is due to suppression of the phonon drag effect by boundary scattering and to distortion of the band structure by mechanical pressure. A direct experimental determination of the phonon drag effect by means of point contact experiments is shown to be possible. Former experiments are critically discussed in view of perturbing effects.

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