Electronically controlled metastable defect reaction in InP

We report the observation of a reversible charge-state—dependent defect reaction in 1- MeV-electron—irradiated $n$-type InP. The reaction, observed by capacitance transient spectroscopy and thermally stimulated capacitance, is characterized by metastable defect configurations at $T\lesssim 160$ K. The electronic properties of the two configurations, together with the reaction kinetics, provide evidence regarding the nature of the defects involved. The phenomenon can be described by a model involving the interaction of a shallow donor with an intrinsic defect or defect complex. The defect charge state controls an electrostatically driven pairing-dissociation reaction which results in changes in the observed defect electronic properties.