Hall Mobility Maps for 4H-Silicon Carbide by Monte Carlo Simulations
Open Access
- 4 April 2014
- conference paper
- Published by IOP Publishing in Journal of Physics: Conference Series
- Vol. 494
Abstract
No abstract availableThis publication has 8 references indexed in Scilit:
- Monte Carlo simulation of bulk semiconductors for accurate calculation of drift velocity as a parameter for drift-diffusion, hydrodynamic modelsMaterials Science and Engineering: B, 2009
- Calculation of the electron Hall mobility and Hall scattering factor in 6H-SiCJournal of Applied Physics, 2009
- Electron mobility models for 4H, 6H, and 3C SiC [MESFETs]IEEE Transactions on Electron Devices, 2001
- Donor and acceptor concentration dependence of the electron Hall mobility and the Hall scattering factor in n-type 4H– and 6H–SiCJournal of Applied Physics, 2001
- Measurement of the Hall scattering factor in 4H and 6H SiC epilayers from 40 to 290 K and in magnetic fields up to 9 TJournal of Applied Physics, 1998
- Monte Carlo study of electron transport in SiCJournal of Applied Physics, 1998
- The Monte Carlo Method for Semiconductor Device Simulation1989
- Carrier mobilities in silicon empirically related to doping and fieldProceedings of the IEEE, 1967