Controlling of electrical characteristics of Al/p-Si Schottky diode by tris(8-hydroxyquinolinato) aluminum organic film

This publication has 32 references indexed in Scilit:

• Analysis of electronic parameters and interface states of boron dispersed triethanolamine/p-Si structure by AFM, I–V, C–V–f and G/ω–V–f techniques
  Microelectronic Engineering, 2010
• Alternating-current electroluminescence from an organic heterojunction sandwiched between two amorphous SiO2 layers
  Journal of Applied Physics, 2005
• The Schottky barrier height of the rectifying Cu/pyronine-B/p-Si, Au/pyronine-B/p-Si, Sn/pyronine-B/p-Si and Al/pyronine-B/p-Si contacts
  Synthetic Metals, 2004
• Organic light-emitting diodes based on multilayer structures
  Synthetic Metals, 2001
• Dark and photoelectric conversion properties of p-MgPc/n-Si (Organic/Inorganic) heterojunction cells.
  Thin Solid Films, 2000
• On the Forward Bias Excess Capacitance at Intimate and MIS Schottky Barrier Diodes with Perfect or Imperfect Ohmic Back Contact
  Physica Scripta, 2000
• New technique for the determination of series resistance of Schottky barrier diodes
  Solid-State Electronics, 1992
• Light-emitting diodes based on conjugated polymers
  Nature, 1990
• Interface capacitance in metal-semiconductor junctions
  Journal of Applied Physics, 1989
• Electronic states at silicide-silicon interfaces
  Physical Review Letters, 1986