Correlation betweenpinning and development of metallic character in Ag overlayers on GaAs(110)
Authors:
- 1 February 1988
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 60 (5) , 440-443
Abstract
Ag is deposited on room-temperature and low-temperature GaAs(110). Correlation is found between the appearance of metallicity in the Ag layer, as inferred from the width of the Ag-4d band, and the pinning of the Fermi level at the GaAs surface. These results suggest the importance of metal-induced gap states at high coverage (>2 Å) in the formation of the Schottky barrier.Keywords
This publication has 15 references indexed in Scilit:
- Initial stages of Schottky barrier formation: Temperature effectsJournal of Vacuum Science & Technology B, 1987
- Role of virtual gap states and defects in metal-semiconductor contactsPhysical Review Letters, 1987
- The kinetics of Schottky barrier formation: Al on low-temperature GaAs(110)Solid State Communications, 1986
- Kinetic study of Schottky barrier formation of In on GaAs(110) surfaceJournal of Vacuum Science & Technology A, 1986
- GaAs(110) -Al INTERFACES FORMED AT LOW TEMPERATURELe Journal de Physique Colloques, 1984
- Schottky Barrier Heights and the Continuum of Gap StatesPhysical Review Letters, 1984
- Semiconductor surface structuresSurface Science Reports, 1983
- The structure and properties of metal-semiconductor interfacesSurface Science Reports, 1982
- Schottky barriers: An effective work function modelApplied Physics Letters, 1981
- New and unified model for Schottky barrier and III–V insulator interface states formationJournal of Vacuum Science and Technology, 1979