Characterization of X-ray radiation damage in Si/SiO/sub 2/ structures using second-harmonic generation
Authors:
- Z. MarkaZMZ. Marka
- S.K. SinghSSS.K. Singh
- W. WangWWW. Wang
- S.C. LeeSLS.C. Lee
- J. KavichJKJ. Kavich
- B. GlebovBGB. Glebov
- S.N. RashkeevSRS.N. Rashkeev
- A.P. KarmarkarAKA.P. Karmarkar
- R.C. AlbridgeRAR.C. Albridge
- S.T. PantelidesSPS.T. Pantelides
- R.D. SchrimpfRSR.D. Schrimpf
- D.M. FleetwoodDFD.M. Fleetwood
- 1 December 2000
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 47 (6) , 2256-2261
Abstract
No abstract availableThis publication has 23 references indexed in Scilit:
- Stability of trapped electrons in SiO2Applied Physics Letters, 1999
- Bulk oxide traps and border traps in metal–oxide–semiconductor capacitorsJournal of Applied Physics, 1998
- Photoinduced trap generation at the Si-SiO 2 interfaceApplied Physics B, 1998
- A review of optical second-harmonic and sum-frequency generation at surfaces and interfacesJournal of Physics D: Applied Physics, 1996
- Analysis of second-harmonic generation by unamplified, high-repetition-rate, ultrashort laser pulses at Si(001) interfacesIEEE Journal of Selected Topics in Quantum Electronics, 1995
- Second- and third-harmonic generation from cubic centrosymmetric crystals with vicinal faces: phenomenological theory and experimentJournal of the Optical Society of America B, 1994
- The nature of the trapped hole annealing processIEEE Transactions on Nuclear Science, 1989
- The Response of MOS Devices to Dose-Enhanced Low-Energy RadiationIEEE Transactions on Nuclear Science, 1986
- Hole Removal in Thin-Gate MOSFETs by TunnelingIEEE Transactions on Nuclear Science, 1985
- Inversion Layer Transport and the Radiation Hardness of the Si-SiO2 InterfaceIEEE Transactions on Nuclear Science, 1978