Experimental observations of the thermal stability of high-k gate dielectric materials on silicon
Authors:
- P.S. LysaghtPLP.S. Lysaght
- P.J. ChenPCP.J. Chen
- R. BergmannRBR. Bergmann
- T. MessinaTMT. Messina
- R.W. MurtoRMR.W. Murto
- H.R. HuffHHH.R. Huff
- 1 May 2002
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 303 (1) , 54-63
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
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- High-k Dielectrics and Dual Metal Gates: Integration Issues for New CMOS MaterialsMRS Proceedings, 1999
- Quantum-mechanical modeling of electron tunneling current from the inversion layer of ultra-thin-oxide nMOSFET'sIEEE Electron Device Letters, 1997
- Thermodynamic stability of binary oxides in contact with siliconJournal of Materials Research, 1996