Very low surface recombination velocities on p-type silicon wafers passivated with a dielectric with fixed negative charge
Authors:
- G. AgostinelliGAG. Agostinelli
- A. DelabieADA. Delabie
- P. VitanovPVP. Vitanov
- Z. AlexievaZAZ. Alexieva
- H.F.W. DekkersHDH.F.W. Dekkers
- S. De WolfSWS. De Wolf
- G. BeaucarneGBG. Beaucarne
Top Cited Papers
- 1 November 2006
- journal article
- Published by Elsevier in Solar Energy Materials and Solar Cells
- Vol. 90 (18-19) , 3438-3443
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
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- Evidence of a high density of fixed negative charges in an insulation layer compound on siliconThin Solid Films, 2001
- Surface chemistry of Al2O3 deposition using Al(CH3)3 and H2O in a binary reaction sequenceSurface Science, 1995