Characterization of the OSF-band structure in n-type Cz-Si using photoluminescence-imaging and visual inspection
Authors:
- 15 March 2013
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 367, 68-72
Abstract
No abstract availableKeywords
This publication has 21 references indexed in Scilit:
- Effect of oxygen precipitation on the performance of Czochralski silicon solar cellsSolar Energy Materials and Solar Cells, 2011
- Detecting efficiency‐limiting defects in Czochralski‐grown silicon wafers in solar cell production using photoluminescence imagingPhysica Status Solidi (RRL) – Rapid Research Letters, 2011
- Influence of Ring Oxidation-Induced Stack Faults on Efficiency in Silicon Solar CellsChinese Physics Letters, 2008
- Photoluminescence imaging of silicon wafersApplied Physics Letters, 2006
- Defect engineering of Czochralski single-crystal siliconMaterials Science and Engineering: R: Reports, 2000
- Minority carrier lifetime of p-type silicon containing oxygen precipitates: influence of injection level and precipitate size/densityMaterials Science and Engineering: B, 2000
- Grown-in microdefects, residual vacancies and oxygen precipitation bands in Czochralski siliconJournal of Crystal Growth, 1999
- Effects of Thermal History on the Formation of Oxidation-induced Stacking Fault Nuclei in Czochralski Silicon during Crystal GrowthJapanese Journal of Applied Physics, 1997
- Generation of Oxidation-Induced Stacking Faults in Czochralski-Grown Silicon Crystals Exhibiting a Ring-like Distributed Stacking Fault RegionJapanese Journal of Applied Physics, 1995
- Formation Process of Stacking Faults with Ringlike Distribution in CZ-Si WafersJapanese Journal of Applied Physics, 1989