Estimating oxide-trap, interface-trap, and border-trap charge densities in metal-oxide-semiconductor transistors
Authors:
- 11 April 1994
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 64 (15) , 1965-1967
Abstract
A simple method is described that combines conventional threshold‐voltage and charge‐pumping measurements on n‐ and p‐channel metal‐oxide‐semiconductor (MOS) transistors to estimate radiation‐induced oxide‐, interface‐, and border‐trap charge densities. In some devices, densities of border traps (near‐interfacial oxide traps that exchange charge with the underlying Si) approach or exceed the density of interface traps, emphasizing the need to distinguish border‐trap contributions to MOS radiation response and long‐term reliability from interface‐trap contributions. Estimates of border‐trap charge densities obtained via this new dual‐transistor technique agree well with trap densities inferred from 1/f noise measurements for transistors with varying channel length.Keywords
This publication has 16 references indexed in Scilit:
- A critical comparison of charge-pumping, dual-transistor, and midgap measurement techniques (MOS transistors)IEEE Transactions on Nuclear Science, 1993
- The role of border traps in MOS high-temperature postirradiation annealing responseIEEE Transactions on Nuclear Science, 1993
- Experimental evidence of two species of radiation induced trapped positive chargeIEEE Transactions on Nuclear Science, 1993
- Effects of device scaling and geometry on MOS radiation hardness assuranceIEEE Transactions on Nuclear Science, 1993
- New insights into radiation-induced oxide-trap charge through thermally-stimulated-current measurement and analysis (MOS capacitors)IEEE Transactions on Nuclear Science, 1992
- Effect of radiation-induced interface traps on 1/f noise in MOSFET'sIEEE Transactions on Nuclear Science, 1992
- 1/f noise in n- and p-channel MOS devices through irradiation and annealingIEEE Transactions on Nuclear Science, 1991
- Physical basis for nondestructive tests of MOS radiation hardnessIEEE Transactions on Nuclear Science, 1991
- Evidence that similar point defects cause 1/fnoise and radiation-induced-hole trapping in metal-oxide-semiconductor transistorsPhysical Review Letters, 1990
- Theory and application of dual-transistor charge separation analysisIEEE Transactions on Nuclear Science, 1989