Tunnel magnetoresistance properties and annealing stability in perpendicular anisotropy MgO-based magnetic tunnel junctions with different stack structures
- 28 March 2011
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 109 (7) , 07C711
Abstract
We have investigated the effect of stack structures on tunnel magnetoresistance (TMR) properties in perpendicular anisotropy MgO-based magnetic tunnel junctions (p-MTJs) with CoFe/Pd multilayer and CoFeB insertion. By adopting Ta and Ru cap-layers, the TMR ratios of 113 and 106% are obtained at annealing temperature (Ta) of 325 °C, respectively. Particularly, the Ru cap-layer is effective in realizing a TMR ratio of 100% at Ta = 350 °C. By replacing (Co25Fe75)80B20 with (Co25Fe75)85B15, the TMR ratio increased quickly at low Ta, reaching a maximum of 120% at Ta = 300 °C.Keywords
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